Search academic texts

Information × Registration Number 0299U004251, 0195U026117 , R & D reports Title Kinetics of rebuilding the defect-impurity complexes at radiation-thermal treatment of silicon and binary semiconductors. popup.stage_title Head Lytovchenko P.G., Registration Date 16-05-2001 Organization Sceintific Center "Inststute for nuclear reaseach National Academy of sciences Ukraine popup.description2 Kinetics of oxygen precipitation in silicon with various types and concentration of radiation detects was investigated. The peculiarities of disordering binary semiconductors irradiated by high energy nuclear particles were studied. On the base of p-i-n structure high efficiency sensors of fast neutrons and (-radiation were developed. Product Description popup.authors popup.nrat_date 2020-04-02 Close