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Information × Registration Number 0299U004372, 0196U010321 , R & D reports Title Complex investigation of the admixtural-defects states in covalent semiconductors popup.stage_title Head Tsmots' V.M., Registration Date 04-02-2000 Organization Drohobych Ivan Franko State Pedagogical University popup.description2 The experimental and theoretical investigations of сovalent semiconductors with different types of admixture - defect structures were carried out. The purpose of the paper is an installation of the influence of admixture - defect states upon magnetic and electrophysical properties of semiconductors upon processes which happen in them under the action of interior and exterior factors. Side by side with electrophysical, X-ray- and microstructural methods experimental and theoretical investigation of static magnetic susceptibility is widely applied. The model for description of magnetic ordering of electronic spins on dislocation structures is formed; the evolution of defect structure of Si-Ni and Ge-Ni alloys is carried out; the influence of microinhomogeneous distribution of sinks for components of Frenkel's pairs upon the radiation degradation of monocrystal silicon properties is analyzed. The theoretical physic. Product Description popup.authors popup.nrat_date 2020-04-03 Close