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Information × Registration Number 0302U003145, 0101U001044 , R & D reports Title Research of the influence of hydrogen atoms on surface and volume of semiconductor crystals, p-n-junctions and heterostructures on their base popup.stage_title Дослідження процесів генерації, рекомбінації та електричної нейтралізації дефектів на поверхні напівпровідникоів, р-n-переходів і межі розділу напівпровідникових гетероструктур при дії атомарного водню Head Shapovalov Vitalij Pavlovych, Registration Date 18-02-2002 Organization Zaporizhzhia National Technical University popup.description2 The aim of the activity is the research of atomic hydrogen effect on charge state of lattice defects, heterobounds and semiconductor p-n junctions. The subject of the research is silicon and germanium semiconductor structures. The analysis and experimental investigation of atomic hydrogen influence on lattice defects, heterostructures and semiconductor p-n junction have been carried out. Physical and mathematical models have been suggested. Product Description popup.authors popup.nrat_date 2020-04-02 Close