Search academic texts

Information × Registration Number 0302U005084, 0101U002474 , R & D reports Title Stuctural defects and their influence on optical, mechanical and electrophysical properties of semiconductors popup.stage_title Розробка технічного завдання. Дослідження впливу рекомбінаційно-стимульованої дифузії та релаксаційних процесів на розподіл домішок в збуджених та незбуджених електричним струмом кристалах з дислокаціями Head Makara V.A., Registration Date 22-02-2002 Organization Taras Shevchenko Kiev university popup.description2 The most probable physical nature of the processes of dislocations aging has been determenited using the X-ray diffraction method. The recombi-nationally-stimulated by the electric current diffusion of the impurities in silicon as well as the stimulated by electric field recharging of the impurities have been studied. Excitation of the electron subsystem was shown to cause the change both of charge state both of surfase and dislocation glide plane. This leads to crystals electrophysical properties changing. Product Description popup.authors popup.nrat_date 2020-04-02 Close