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Information × Registration Number 0302U005224, 0101U002794 , R & D reports Title Radiation effects in layered structures based on semiconductors and dielectrics, working of theoretical basis of radiation monitoring of environment based on geoinformation modelling popup.stage_title Експериментальні дослідження та теоретичний аналіз можливостей радіаційної модифікації матеріалів. Розробка структури інформаційного забезпечення радіаційного моніторингу довкілля. Head Pelikhatyj M., Registration Date 22-04-2002 Organization Kharkov National University named after V.N.Karazin popup.description2 Object of research: a thin layer on a semi-conductor substrate and semi-conductor materials, processes of their radiational modification; processes of radiatiional monitoring of an environment, information support of radiatiional monitoring systems. The purpose of researches: the experimental and theoretical analysis of possibility for radiational modification of materials, development of the new technologies for production of integrated structures of microcircuits; development of the generalized structure of information support systems of radiational monitoring of territory. Methods of research: methods of the system analysis, methods optical and electronic microscopy, standard methods of termodiffusion technology, methods of mathematical and imitating modeling. The researches of processes of interaction of boron ions flows with silicon and structures on his basis, theoretical and experimental analysis of change of parameters of a formed thin layer and distributions of an introduced element are carried out. It is shown, that the profiles of distribution of an introduced impurity of one and same type in conductors with various conductivity have different forms. There are conditions for formation of new phases in a matrix monocrystalline silicon at ionic bombardment. As a result of researches were revealed nanodimational structures. The results of study of physical processes proceeding at interaction of plasma flows with materials of solid-state electronics have allowed to develop base of physical-technological condition for production of electronic microcircuits excluding influence of subsurface dissimilars to formating of electron-foraminated of transitions. The researches of interrelations between subsystems of system of radiational monitoring are carried out according to its generalized model worked out, the list of functional tasks and the data set, necessary for their effective decision are designated, their preliminary classification is carried out. The generalized structure of information supportsystems of radiational monitoring, algorithms of modeling of the data by ensemble of casual fields and ensemble of landscape figures are worked out. The received results can be used in production of integrated microcircuits, at the analysis of physical processes in sensores of ionizing radiation based on electron-foraminated transitions and at designing of radiational monitoring systems. Product Description popup.authors popup.nrat_date 2020-04-02 Close