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Information × Registration Number 0303U001329, 0101U001839 , R & D reports Title Current transport processes in elements of control and communication systems based on А3В5 thin-film structures popup.stage_title Дослідження впливу ефекту керування по підкладці на розподіл статичного електричного поля вздовж плівки Head Pryvalov E.M., Registration Date 24-02-2003 Organization Institute of Technical Mechanics of the National Academy of Sciences and National Space Agency of Ukraine popup.description2 The study is concerned with thin-film GaAs structures. The investigation method is analytical, numerical and experimental. It is shown that in planar thin-film GaAs structures backgating can provide a quasiuniform electric field corresponding to a high magnitude of negative differential conductivity (NDC) over a length as long as several tens of a micrometer. The underlying physical mechanism lies in the fact that backgating narrows the conductive channel in the film in the cathode-anode direction and thus makes it possible to smooth out the electric field gradient in the NDC region. The field of application is the development of transferred-electron amplifiers and signal processors. Product Description popup.authors popup.nrat_date 2020-04-02 Close