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Information × Registration Number 0303U007062, 0101U001044 , R & D reports Title Research of the influence of hydrogen atoms on surface and volume of semiconductor crystals, p-n-junctions and heterostructures on their base popup.stage_title Дослідження переносу зарядів і домішок на поверхні і в приповерхневих шарах напівпровідникових р-n-переходів і гетероструктур під впливом атомарного водню Head Shapovalov Vitaly, Registration Date 11-02-2003 Organization Zaporizhzhia National Technical University popup.description2 Based on germanium and silicon semiconductor structures were taken for the investigation. The work is devoted to a research of atomic hydrogen influence on charge and impurity transport in p-n junctions and semiconductor heterostructures. Experimental data analysis resulted in physical and mathematical models of investigated processes. Product Description popup.authors popup.nrat_date 2020-04-02 Close