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Information × Registration Number 0304U001908, 0102U005780 , R & D reports Title Manufacturing of effective technology of growth of silicon carbide monocrystals with high structural perfecthion popup.stage_title Розробка ефективної технології вирощування структурно досконалих монокристалів напівпровідникового карбіду кремнію Head Kiselov V.S., Registration Date 13-05-2004 Organization Special Techologial Department popup.description2 The process of growing of bulk silicon carbide crystals of semicondtcting purity was desigued. The growth rate reaches up to 0.85 mm per hour. Samples of silicon carbide 6H-SІС with diameter up to 30 mm were made.5635 Product Description popup.authors popup.nrat_date 2020-04-02 Close