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Information × Registration Number 0304U002186, 0101U002474 , R & D reports Title Structural defects and their influence on optical, mechanical end electrophysical properties of semiconductors popup.stage_title Вплив "деформаційного" старіння на дифракцію рентгенівських променів на дислокаційних структурах. Дослідження "магнітного" та "деформаційного" старіння кристалів з дислокаціями. Head Makara Volodymyr Arseniyovych, Registration Date 23-02-2004 Organization Taras Shevchenko Kiev university popup.description2 The structural perfection of silicon crystals has been studied by method three-crystals X-ray diffraction. The computer programs of calculations based on X-ray diffraction data on size and content of coherent domains have been developed. Firstly, the interaction between dopant atoms and dislocations in crystals of sodium chloride has been investigated. Three kinds of dopant atoms, which form impurity atmospheres caused by the tractions with dislocations have been defined. Firstly, the cufluence of deformation aging of dislocations in silicon in diffraction parameters has been established. The connection among deformation subsystem and electron, magnetic, phonon subsystems of silicon crystals has been studied. The obtained results permit take into account at microscopic analysis of deformation behavior of single and linear defects not only plastic but also spin interactions. Product Description popup.authors popup.nrat_date 2020-04-02 Close