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Information × Registration Number 0304U004159, 0103U004205 , R & D reports Title Complex studying of emission processes and a development of methods of ion diagnostics of nanoobjects, including biological popup.stage_title Дослідження основних характеристик МСВІ та ІФЕ складних напівпровідникових матеріалів Head Bobkov V., Registration Date 25-03-2004 Organization Kharkov National University named after V.N.Karazin popup.description2 The objects of studies were semiconductors of AIIIBV group (GaAs, GaP). The work was directed to studying of the processes taking place at formation of radiation damages in semiconductors GaAs and GaP at an irradiation by ions D2+ and He+ of medium energy as separately as sequentially in different sequence. Methods of research were thermodesorption mass-spectrometry and electron microscopy. The formation of radiation defects in gallium and gallium phosphide irradiated by D2+ and He+ ions of medium energy has been investigated. It was established, that there both own matrix defects and implanted particles of bombarded beam (impurity defects) were accumulated in samples. They interacted forming complexes that could transform at postradiating heating with release of deuterium (or helium) particles. The released gas particles migrate through a bulk of a sample to a surface, and then desorbed deuterium and helium in vacuum. Deuterium and helium capture coefficients at implantations of these ions as separately as sequentially in different sequence were determined. The influence of the previous implantation of particles of one gas on the capture of another one at its subsequent implantation was investigated. In gallium arsenide the previous implantation of deuterium ions resulted in decreasing of the helium capture coefficient in 9 times while the amount of captured deuterium did not change if it was implanted after helium. On the contrary, in gallium phosphide the previous implantation of helium decreased the deuterium capture coefficient in 2 times ehereas the previous implantation of deuterium did not change the amount of captured helium. The activation energies of deuterium and helium thermodesorption from gallium arsenide and gallium phosphide were founded. Electron microscopic studies of surface topographies of semiconductors irradiated by deuterium and helium ions as separately as sequentially in different sequence, have found out formations of blisters that collapsed during postradiating heating. The results of researches can be used at formation of new materials with the given properties and in science of constructional materials. Product Description popup.authors popup.nrat_date 2020-04-02 Close