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Information × Registration Number 0304U004205, 0103U004240 , R & D reports Title Tranfer electron effect in mm-range variband devices on the basis of semiconductors compounds A3B5 popup.stage_title Міждолинний перенос електронів в варизонних напівпровідниках А3В5 та приладах на їх основі Head Arkusha U., Registration Date 26-03-2004 Organization Kharkov National University named after V.N.Karazin popup.description2 Two-level, displaced -maxwellian approach model of transfer electron effect in variband semiconductors has been created. With help of model research of Gunn diodes with variband layer based on semiconductor compound In x(z)Ga[1-x(z)]As, has been done. Composition of the semiconductor x(z) in the active zone of diodes depend nonlinearly on the coordinate. Dependence of process of orgin in diodes dipole domains or the accumulation layers and accordingly formations of output characteristics from of In x(z)Ga[1-x(z)]As variband layer length is established. Influence of variband layer becomes insignificant when his length is much more, than length of diode active zone. Coordinate dependence of frequency relaxation of electrons concentration in the Г- valley is dominant factor determining output characteristics if the length of variband layer and length of diode active zone comparable. Electric field variband a layer is dominant factor determining output characteristics if thelength of variband layer less than - 0,3 mm. The best parameters of output power had variband diode with the centre of variband layer in the middle of active zone and length to approximately equal active zone length - 2,5 mm. The output power flow equal -12,8 kW/cm2 on frequency - 38 GHz from efficiencies of - 13,2% and width frequency range - 25 GHz(from - 30 GHz to - 55 GHz). Product Description popup.authors popup.nrat_date 2020-04-02 Close