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Information × Registration Number 0304U007021, 0104U010749 , R & D reports Title Investigation of mechanisms of current transport in diode structures with Shottku barriers based on SiC and InP popup.stage_title Дослідження механізмів струмопереносу в діодних структурах з бар'єром Шотткі на основі SiC та InP Head Konakova, Registration Date 24-01-2004 Organization Microsensor Ltd popup.description2 The volt-ampere characteristics of new microwave diode structures with Shottku and p-n junctions based on SiC and InP in the temperature range from 4 K to 77 K before and after external actions have been investigated. The nature of mechanisms of current transport has been found. The recommendations for use and improvement of devices have been developed. Product Description popup.authors popup.nrat_date 2020-04-02 Close