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Information × Registration Number 0306U001453, 0105U001879 , R & D reports Title Role of external factors (previous heat treatment radiation irradiation and plastic deformation) on precipitation of oxygen in the crystals of silicon popup.stage_title Вивчення впливу ізовалентної домішки свинцю на вихідні параметри n-кремнію Head Tsmots' V.M., Registration Date 27-03-2006 Organization Drohobych Ivan Franko State Pedagogical University popup.description2 The growth's and decrease's temperature intervals of the concentration of the paramagnetic center in monocrystals Si in the process of their thermal processing in temperatures' scope 650-11000C have bin set. It set that the implantation Si with the impurity Pb removes the main part of the impurity C from the optical active state, decreases the density of the growing microdefects and doesn't influence on the concentration of the dislocation, increases life's time of the instable charge carriers, doesn't create supplementary electrical active structural defects and doesn't influence on the liveliness of the main charge carriers. Product Description popup.authors popup.nrat_date 2020-04-02 Close