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Information × Registration Number 0306U008572, 0106U004199 , R & D reports Title Transients and self-organizing during crystallization in conditions of mismatched crystal-chemical parameters of materials. popup.stage_title Розробка термодинамічної моделі формування початкових островків нової фази при епітаксії з рідкої фази. Проведення технологічних експериментів в системі Si - GaAs, InSb-GaSb. Head Shutov Stanilav, Registration Date 05-12-2006 Organization Kherson national technical university popup.description2 Mechanisms of formation and kinetics of self-organized growth of the heteroepitaxial islands without defects of mismatch of the lattice constants in the systems with differences in crystal-chemical parameters are investigated with theoretical and experimental approach. Thermodynamic model of forming process of the coherent islands and stability criteria of the new phase under conditions of presence of the chemical potential gradient is worked out. Phenomenological model of growth of the initial strained transient layer between the substrate and the heteroepitaxial composition is worked out. It is investigated the influence of the crystallization conditions on morphology and on processes of self-organization of the heteroepitaxial islands of new phase and their localization on the substrate as well as influence of technological regimes of deposition process on morphology and positional relationship between islands at crystallization process and, hence, on energy spectrum of charge carriers, transition kinetics between electron states, luminescent and other properties of heteroepitaxial compositions. Product Description popup.authors popup.nrat_date 2020-04-02 Close