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Information × Registration Number 0307U001629, 0106U001537 , R & D reports Title Physical Phenomena in Transfer Electrons Variband Devises on base of A3B5 semiconductors nitrides popup.stage_title Міждолинний перенос електронів в напівпровідникових нітридах А3В5 Head Arkusha U., Registration Date 17-04-2007 Organization Kharkov National University named after V.N.Karazin popup.description2 Physical effects in the variband devices with intervalleys electrons transfer on the base of semiconductor nitrides А3В5 Dependences of relaxation times and the drift velocity of electrons from an electric field in semiconductor nitrides А3В5 for the analysis of their possible application in Gunn diodes are explored. With the help of a two-temperature model dependences of the drift velocity and frequencies of relaxation of electrons on electric field intensity in binary semiconductors Ga, In, Al and in threefold semiconductors InхGa1-хN, AlхGa1-хN, AlхIn1-хN are received. Perspectivity of use of Gunn diodes on basis Ga, In, InхGa 1, AlхGa 1, AlхIn 1 (for optimum х) in mm - band is shown. Key words: the drift velocity, electric field, relaxation time Product Description popup.authors popup.nrat_date 2020-04-02 Close