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Information × Registration Number 0307U001700, 0106U003144 , R & D reports Title The working out of theoretical bases for radiation monitoring with using of radiational modified matherials and structures popup.stage_title Аналіз взаємозв'язків параметрів іонізуючого випромінювання і характеристик властивостей матеріалів і структур, що опромінюються Head Pelykhatiy Mikola Michailovich, Registration Date 19-04-2007 Organization Kharkov national university named after V.N. Karazin popup.description2 Objects of research: processes of radiation defects formation, processes of changing of mechanical-electrical properties of materials and structures at their interaction with flows of fast particles under the different conditions and processes of radiation monitoring. The purpose of research: obtaining of a new data about mechanisms of radiation defects formation and of changing of mechanical-electrical properties of materials and structures at their interaction with high-energy particles; revealing of dependencies of these changes' behavior on the parameters of ionizing irradiation; obtaining a new data about the influence of ionizing radiation at structures of microelectronics; obtaining of a new data about the influence of the different types of thermal processing at the mechanical relaxation properties of the structurally normalized metallic materials; analysis and generalization of the results of theoretical and experimental researches of the processes of the radiation defects formation in respectto their usage in radiation monitoring systems. Methods of research and instrumentation: charged particles accelerators, alpha- and gamma-irradiation, electronography, microscopy (optical, raster), spectroscopy, methods of measuring and controlling of electro-physical properties of materials, methods of system analysis, methods of physical and mathematical modeling, methods of the theory of recognition. As the result of carrying out the research such main outcomes were obtained: - analysis and generalization of the results of theoretical and experimental researches for the processes of the radiation defects formation and of changing of materials and structures mechanical-electrical properties under the different conditions were carried out; the results of these research have allowed determining that the main tendency of experimental researches organization is distribution of the summary effects at separate acts at the last years; this is caused by improvement of methods for direct defects observation and it gives the possibility of immediate comparison of experimental observations to the theory conclusions; in the time the theory development is stimulated by the increasing using of analytical and numerical methods; - there is showed development of system experimental techniques, system models and modeling complexes, modern informational technologies and technologies for integration of physical and simulation experiments are became important and actual for the further research of radiation defects formation and of changing of mechanical-electrical properties of materials and structures under the different conditions; - the technique of simultaneous measuring of electrical resistance and of internal friction in thin friable plates of radiation injured silicon materials is designed; it is investigated the behavior of internal friction (IF) ? and of electrical resistance of silicon monocrystals with low consistency of dislocations (10-100 cm-2) during ?-irradiation; the effect of strengthening and changing of directhysteresis to the inverse one at the amplitude dependency of internal friction when increasing of ?-irradiation dose power was revealed, that could be explained by dislocations blocking with vacancies of radiation origin and by space-charge influence; - sputtering of layered structures of metal-semiconductor and metal-dielectric type and mixing their components in fields of intensive ionising radiation have been investigated; by calculation of the cascade of collision in the substance by the method generations, theoretical expressions for spectra and sputtering coefficients have been obtained and on their basis profiles of the recoil atoms has been calculated. The results of this work could be used for investigation of materials sputtering in fields of intensive ionising radiation, for the creation of semiconductor materials and its products with given properties, for working out of technologies foe forecasting of radiation injury level for materials and devices in intensive radiation fields, for developmentof the radiation monitoring systems. Product Description popup.authors popup.nrat_date 2020-04-02 Close