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Information × Registration Number 0308U003012, 0106U001537 , R & D reports Title Physical Phenomena in Transfer Electrons Variband Devises on base of A3B5 semiconductors nitrides popup.stage_title Енергетичні та частотні характеристики діодів на основі напівпровідникових нітридах А3В5 Head Arkusha U., Registration Date 20-02-2008 Organization Kharkov National University named after V.N.Karazin popup.description2 The object of research is an intervally transport of electrons in semiconductor nitride of A3B5. A purpose of work is power and frequency characteristics of Gunn diodes on the basis of semiconductor nitride A3B5 ( GAN, INN, ALN, In GaN, AlGaN, AllnN): a) Power and frequency characteristics of diodes with n+ - n- cathodes b) Power and frequency characteristics of diodes with n+ - n- - n - cathodes A research method is a mathematical design of physical processes in the Gunn generatorson the basis of semiconductor nitride A3B5 (GAN, INN, ALN, InGaN, AlGaN, AllnN). Basic results and their novelty: 1.On the basis of twotemperature model power and frequency characteristics of Gunn diodes are investigational with different length of active area on the basis of semiconductor nitride A3B5 ( GAN, INN, ALN, In GaN, AlGaN, AllnN): a) Power and frequency characteristics of diodes with n+ - n- cathodes c) Power and frequency characteristics of diodes with n+ - n- - n - cathodes2. The perspective of such diodes in mm- and submm - ranges, is shown. Product Description popup.authors popup.nrat_date 2020-04-02 Close