Search academic texts

Information × Registration Number 0310U002327, 0108U000586 , R & D reports Title The effect of external influences on the physical parameters of silicon and modified semiconducting materials popup.stage_title Вплив термічних та радіаційних дефектів на магнітні, електричні та структурні властивості кремнію легованого ізовалентними домішками Head Tsmots' Volodymyr Mykhailovych, Registration Date 05-03-2010 Organization Drohobych Ivan Franko State Pedagogical University popup.description2 It is revealed that the previous thermal treatment (PTT) at 1320°С speeds up the formation of oxygen thermodonors at 650°С (OTDs-II) in the samples doping of the lead (n-Si[Pb]) and on the contrary slows down in the control samples (n-Si). The deceleration of generation's tempo OTDs-II in the samples n-Si is explained by the dissolving of the oxygen thermodonors' embryo. Besides the complex Pb with the oxygen's atoms dissolve in n-Si[Pb]. As a result the concentration of the optic active oxygen after PTT-1320°С grows nearly at one and a halt time. The kinetic of the formation of thermodonors of different types at 450°С in n-Si(P) has been studied. The absence of the correlation with the kinetic of the accumulation of paramagnetic centers in the samples has been shown. The interpretation of the obtained results has been proposed. Product Description popup.authors Зайцев Олександр Вадимович Лучкевич Михайло Михайлович Павловська Надія Тарасівна Павловський Юрій Вікторович Паньків Людмила Іванівна Ціціхович Оксана Володимирівна Цмоць Володимир Михайлович popup.nrat_date 2020-04-02 Close