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Information × Registration Number 0311U003826, 0109U002856 , R & D reports Title nanostructed material on the basis of connections A3B5 popup.stage_title Oдержання та дослідження властивостей нанопоруватих сполук АIIIBV Head Kidalov Valeryu, Registration Date 09-12-2011 Organization Berdyansk State Pedagogical University popup.description2 Porous connections of A3B5 (GaAs, GaP, InP) are got by the method of electrochemical etching.Retrieved indium phosphide layers n-type with pore size 10 - 40 nm (for n-InP (100)) and 70 - 150 nm (for n-InP (111)). For the first time the technique of obtaining porous p-InP by photo electrochemical etching. Obtained samples with pore size 30 - 40 nm The influence of anodizing conditions on indium phosphide poroutvorennya processes. Found that a decisive role in the early stages of digestion play crystal defects. What manifest themselves as nuclei for pits digestion. Shown that the electrochemical etching is an effective method for detecting the number of dislocations on the crystal surface and segregation phenomena that arise when growing strongly doped crystals. Product Description popup.authors Cукач Георгій Олексійович Балан Олександр Сергійович Ефіменко Юрій Олександрович Кирилаш Олександр Іванович Коваль Андрій Володимирович popup.nrat_date 2020-04-02 Close