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Information × Registration Number 0312U003053, 0109U002864 , R & D reports Title The influence of the delta-doping position within a QW on the electro-optical properties of the QW. popup.stage_title Опрацювання технології нанесення контактів. Характеризація зразків за допомогою рентгеноструктурних вимірювань, вольт-амперних залежностей і ефекту Холу. Head Tulupenko Viktor M., Registration Date 23-01-2012 Organization Donbass State Engineering Academy popup.description2 As the object of investigations we used either the centre delta-doped or the edge delta-doped with Boron Si/SiGe/Si quantum wells. It was established that on the whole the samples were in accordance with the booked parameters and, accordingly, with the data obtained from technologists. The very important for further investigations is the fact that quantum wells are still stressed after centre or edge delta doping. The temperature measurements of resistivity and Hall phenomena showed that activation energies for both types of samples used (centre and edge delta-doped) were sufficiently different at low (helium) temperatures, which was in accordance with existing theoretical conceptions. On the contrary, the similar conclusion cannot be made for activation energies at high (room) temperatures. It indirectly denotes on the influence of the ionization of the impurity delta-layer in quantum well on the binding energy of the impurity. Product Description popup.authors Акімов Володимир Ігоревич Тулупенко Віктор Миколайович Фоміна Оксана Сергійовна popup.nrat_date 2020-04-02 Close