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Information × Registration Number 0314U004125, 0114U000668 , R & D reports Title Development of draft design specifications on silicon high voltage microwave p-i-n diodes with protective layer popup.stage_title Розроблення ескізної конструкторської документації на кремнієві високовольтні НВЧ р-і-n діоди з захисним Head Krivutsa V., Registration Date 14-05-2014 Organization State Scientific-Reseach Institute "Orion" popup.description2 It has been developed engineering documentation on the silicon high voltage microwave p-I-n diodes with a protective coating, the technological processes were worked through, the current-voltage, voltage-capacitance and switching characteristics of experimental samples of silicon high voltage microwave p-I-n diodes with protected surface were investigated under normal weather conditions. Product Description popup.authors popup.nrat_date 2020-04-02 Close