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Information × Registration Number 0314U004128, 0108U004834 , R & D reports Title Development and creation of technologies for production of low-temperature silicon compounds for use in microelectronic sensors. popup.stage_title Розробка та виготовлення нанопористих та наноструктурованих матеріалів. Дослідження їх структури та електричних властивостей. Head Mitin Vadym Fedorovych, Registration Date 19-05-2014 Organization Institute of Semiconductor Physics of NAS of Ukraine popup.description2 The technology of making for SixGe1-x heterostructure by thermal evaporation of solid solution with various compositions, using molecular beam in vacuum onto GaAs substrates with (100) and (111) orientations, was developed. Based on results of modulation electroreflection spectroscopy and light absorption it was defined influence of composition of solid solution (0 < x < 10 ат. %) and intrinsic stresses in the heterosistem on energies of Brilluena band critical points, time of energies relaxation of the light excited charge carries on film surface and substrate interface, as well as state density tails in band gap of the films. Product Description popup.authors І.Ю.Неміш В.В.Холевчук Л.А.Матвеєва О.С.Кулик О.Ю.Колядіна П.Л.Нелюба popup.nrat_date 2020-04-02 Close