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Information × Registration Number 0314U004129, 0108U004834 , R & D reports Title Development and creation of technologies for production of low-temperature silicon compounds for use in microelectronic sensors. popup.stage_title Дослідження оптичних та сенсорних властивостей нанопористих та наноструктурованих матеріалів. Head Mitin Vadym Fedorovych, Registration Date 19-05-2014 Organization Institute of Semiconductor Physics of NAS of Ukraine popup.description2 The preparation condition on physical properties of SixGe1-x/GaAs і (Si2)xGaAs1-х/Si heterosystems was defined. From the light electroreflectance spectra it was defined the influence of microwave and gamma radiation on quality of interface, intrinsic stress and electronic parameters of heterosystems depending on condition of preparation. Product Description popup.authors І.Ю.Неміш В.В.Холевчук Л.А.Матвеєва О.С.Кулик О.Ю.Колядіна П.Л.Нелюба popup.nrat_date 2020-04-02 Close
R & D report
Development and creation of technologies for production of low-temperature silicon compounds for use in microelectronic sensors.
Head: Mitin Vadym Fedorovych. Development and creation of technologies for production of low-temperature silicon compounds for use in microelectronic sensors.. (popup.stage: Дослідження оптичних та сенсорних властивостей нанопористих та наноструктурованих матеріалів.). Institute of Semiconductor Physics of NAS of Ukraine. № 0314U004129
1 documents found

Updated: 2026-03-23


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