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Information × Registration Number 0315U005018, 0114U005601 , R & D reports Title Development of draft design specifications on silicon high voltage microwave p-i-n diodes with protective layer popup.stage_title Розроблення ескізної конструкторської документації на кремнієві високовольтні НВЧ р-і-n діоди з захисним покриттям. Head Krivutsa V., Registration Date 02-02-2015 Organization State Scientific-Reseach Institute "Orion" popup.description2 It was developed outline design and technological documentation and also produced a pilot batch of silicon high-voltage microwave p-i-n diodes with a protective coating. The study of current-voltage and C-V characteristics of the mesa-structures of silicon high-voltage microwave p-i-n diodes with a protected surface in normal climatic conditions. The study of current-voltage parameters mesa-structures of high-voltage microwave diodes in terms of switching diodes from forward current 20 - 100 mA to reverse voltage 50 V. Time of switching diodes with the power pointed is 3 - 5 mks. Product Description popup.authors popup.nrat_date 2020-04-02 Close