1 documents found
Voitovych Vasyl Vasylyovych. The influence of isovalent lead impurity on the thermal and radiation defects creation in silicon
: к.ф.-м.н. :
spec.. 01.04.07 - Фізика твердого тіла :
presented. 2005-12-22; popup.evolution: .;
Institute of physics NASU. – , 0406U000240.
1 documents found
Updated: 2026-03-26
