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Information × Registration Number 2104U000297, Article popup.category Стаття Title popup.author popup.publication 01-01-2004 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/10812 popup.publisher Изд-во СумГУ Description Influencing of concentration of hydrogen is explored in a gas mixture on electric and optical properties of the tapes of hydrogenated amorphous silicon, got in a magnetron chamber at the area of structures to 30 sm2. The films a-Si:H, which were besieged at the maximal concentration of hydrogen in the chamber, had increase of values of optical width of the forbidden zone (Eg) and energy of activation (Ea) till 1.75 эВ and 0.25 эВ, accordingly. The width of a spectrum has increased, and the coefficient of absorption has decreased. При цитировании документа, используйте ссылку http://essuir.sumdu.edu.ua/handle/123456789/10812 popup.nrat_date 2025-03-31 Close
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: published. 2004-01-01; Сумський державний університет, 2104U000297
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Updated: 2026-03-29