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Information × Registration Number 2111U000229, Article popup.category Стаття Title popup.author popup.publication 01-01-2011 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/27893 popup.publisher Видавництво СумДУ Description The paper presents a doping dependent threshold voltage model for the short-channel double-gate (DG) MOSFETs. The channel potential has been determined by solving the two-dimensional (2D) Poisson’s equation using the parabolic potential approximation in the vertical direction of channel. Threshold voltage sensitivity on acceptor doping and device parameters is discussed in detail. The threshold voltage expression has been modified by incorporating the effects of band gap narrowing for highly doped DG MOSFETs. Quantum mechanical corrections have also been employed in the threshold voltage model. The theoretical results have been compared with the ATLASTM simulation results. The present model is found to be valid for acceptor doping variation from 1014 cm–3 to 5 × 1018cm–3. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/27893 popup.nrat_date 2025-03-24 Close