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Information × Registration Number 2111U000526, Article popup.category Стаття Title popup.author popup.publication 01-01-2011 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/9640 popup.publisher Sumy State University Publishing Description Structural evolution of the hydrogenated amorphous silicon carbide (a-SiC:H) films deposited by rf-PECVD from a mixture of SiH4 and CH4 diluted in Ar shows that a smooth transition from amorphous to nanocrystalline phase occurs in the material by increasing the Ar dilution. The optical band gap (Eg) decreases from 1.99 eV to 1.91 eV and the H-content (CH) decreases from 14.32 at% to 5.29 at% by increasing the dilution from 94 % to 98 %. at 98 % Ar dilution, the material contains irregular shape Si nanocrystallites with sizes over 10 nm. Increasing the Ar dilution further to 98.4 % leads to a reduction of the size of the Si nanocrystals to regular shape Si quantum dots of size about 5 nm. The quantum confinement effect is apparent from the increase in the Eg value to 2.6 eV at 98.4 % Ar dilution. Formation of Si quantum dots may be explained by the etching of the nanocrystallites of Si by the energetic ion bombardment from the plasma. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/9640 popup.nrat_date 2025-03-24 Close