Search academic texts

Information × Registration Number 2111U000607, Article popup.category Стаття Title popup.author popup.publication 01-01-2011 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/27887 popup.publisher Видавництво СумДУ Description The characteristics of typical sub-100 nm high K gate dielectrics MOSFET with different gate materials are simulated by two dimensional device simulators (ATLAS and ATHENA). The impact of interface charges on the characteristics of Poly-Si and TiN metal gate MOSFETs are investigated. The simulation results shows that, at high interface charge densities, the devices with Poly-Si gate degrade much compared to metal gate MOSFET structures. Emphasis is given to study the mobility degradation which stands as a major hurdle with the implementation of high-k dielectrics in nano-scale devices. The advantages of using Watt model over other models for the extraction of channel mobility is also clearly explained. The performance of the high-k MOSFET with metal electrode and poly-silicon electrode is also compared for various interface state charges. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/27887 popup.nrat_date 2025-03-24 Close