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Information × Registration Number 2111U000942, Article popup.category Стаття Title popup.author popup.publication 01-01-2011 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/9649 popup.publisher Sumy State University Publishing Description A comparison of the interfacial charges present in the high-k stacked gate dielectrics for Zr-doped HfOx and undoped HfOx samples with titanium nitride (TiN) metal gate electrode is reported here. The metal gate work function value (4.31 eV) for TiN gate electrode was extracted from the TiN/SiO2 /p-Si capacitor. The calculated charge densities in both doped and undoped films are of the order of 1012 cm – 2. The interfacial charge present in the high-k/SiO2 interface is negative for ALD deposited pure HfO2 samples; where as the charges are positive for RF-sputter deposited pure HfO2 and Zr-doped HfOx samples. The existence of positive interface charges may be due to the fabrication process. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/9649 popup.nrat_date 2025-03-24 Close