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Information × Registration Number 2111U001049, Article popup.category Стаття Title popup.author popup.publication 01-01-2011 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/22021 popup.publisher Видавництво СумДУ Description In the present work, the I-V characteristics of Ni/GaN Schottky diodes have been studied. The Schottky diodes, having different sizes using Ni/Au and ohmic contacts using Ti/Al/Ni/Au were made on n-GaN. The GaN was epitaxially grown on c-plane sapphire by metal organic chemical vapor deposition (MOCVD) technique and had a thickness of about 3.7 μm. The calculated ideality factor and barrier height from current-voltage (I-V) characteristics (at 300 K) for two GaN Schottky diodes were close to ~1.3 and ~ 0.8 eV respectively. A high reverse leakage current in the order of 10 – 4A/cm2 (at – 1 V) was observed in both diodes. A careful analysis of forward bias I-V characteristics showed very high series resistance and calculation for ideality factor indicated presence of other current transport mechanism apart from thermionic model at room temperature. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/22021 popup.nrat_date 2025-03-31 Close