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Information × Registration Number 2111U001353, Article popup.category Thesis Title popup.author popup.publication 01-01-2011 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/20897 popup.publisher Видавництво СумДУ Description There is actual investigation of the processes creating the buried barrier layers that prevent diffusion of high-temperature coating materials because of the development of ion and ion-plasma technologies, surface treatment of material. In the present work we discuss the results on the thermal stability, structure, physical and mechanical properties of the buried barrier layers formed 2*1018 ion/sm2 , by ion implantation of oxygen and carbon (the dose the energy of 1.5 – 2 MeV) accelerator to the DC-60. Nuclear spectroscopic techniques involving X-ray analysis systematic studies of the influence of the buried barrier layer on the thermally induced processes in the layered system Fe-Be. It is established: the sequence of phase transitions in the surface layers and inside the sample during isothermal annealing. It is shown that the implanted oxygen ions buried barrier layer in the matrix of Fe slow mutual diffusion of beryllium atoms and iron atoms. The kinetics of the process of mutual diffusion of Fe and Be in a solution Fe (Be) for both multi-layered systems with a layer of implanted of oxygen and without it. The evolution of the distribution of the oxygen implanted layer in the copper and the effect of thermal annealing. It is shown that even at an annealing temperature of ~ 200ºC in this system is the diffusion of oxygen into the sample of copper. Consequently, the oxygen cannot be used as a subsurface barrier layer in copper, in contrast to iron, where oxygen-implanted layer remains stable at much higher temperatures. The research phase formation in iron implanted with carbon and deposited on the surface layer of beryllium. It is established that the sample implanted with a layer of carbon formation on the surface Fe2 phase begins after 5 hours annealing at 650ºC. For the case without implantation – education phase not fixed. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/20897 popup.nrat_date 2025-05-12 Close
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: published. 2011-01-01; Сумський державний університет, 2111U001353
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Updated: 2026-03-26