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Information × Registration Number 2112U000632, Article popup.category Стаття Title popup.author popup.publication 01-01-2012 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/27780 popup.publisher Сумський державний університет Description The increasing challenges for further scaling down of Si CMOS require the study of alternative channel materials. This paper highlights the significance of III-V compound semiconductor materials in order to face the looming fate of Si CMOS technology. The potential advantages of using III-Vs as channel materials for future III-V CMOS is its outstanding transport properties that have been widely accepted in high frequency RF applications. However, many significant challenges in front of III-V digital technology needs to be overcome before III-V CMOS becomes feasible for next generation high speed and low power logic applications. But it may be that this situation is changing given recent progress in the fabrication of high-mobility III-Vs based heterostructure electronic devices for logic applications to fulfill the needs towards the everyday evolving III-V CMOS technology. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/27780 popup.nrat_date 2025-03-24 Close