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Information × Registration Number 2112U001656, Article popup.category Thesis Title popup.author popup.publication 01-01-2012 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/35159 popup.publisher Sumy State University Description When implanting GaP with boron and heavier argon ions, severe distortion of crystal structure occurs. Raman scattering has shown that with implanted ion dose change the crystal structure transforms gradually into disordered state, in which coexisting of crystalline, microcrystalline, nanocrystalline and amorphous phases is possible. At the certain stage of implantation the formation of continuous amorphous layer of GaP takes place. The critical doses of amorphization of GaP at implantation with B and Ar ions have been defined. The graph of dependence of LO phonon halfwidths upon implantation doses is also a characteristic of synthesizing of nano-GaP. We suggest a possible mechanism for structural transition dynamics in GaP caused by ion implantation. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35159 popup.nrat_date 2025-05-12 Close