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Information × Registration Number 2113U000474, Article popup.category Стаття Title popup.author popup.publication 01-01-2013 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/30999 popup.publisher Сумський державний університет Description Investigation and understanding of Schottky diodes continue to be interesting both for basic as well as technological points of view. Even now the evolutionary aspects of such contacts are not very clearly understood. In this paper it is shown that in respect of interfacial strain contribution to the barrier heights of such contacts semiconductor – liquid metal contacts are relatively better placed than solid semiconductor-solid metal contacts. Results on Ga-Si(p) contact are discussed in this paper to show phase sensitive contribution to the barrier height of such Schottky contacts. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/30999 popup.nrat_date 2025-03-24 Close