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Information × Registration Number 2113U000530, Article popup.category Стаття Title popup.author popup.publication 01-01-2013 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/31010 popup.publisher Сумський державний університет Description The laser diode facet damage is one of the impeding factors of the high-power laser diode operation. To overcome this restriction laser diode facet coating can be utilized. During the high power operation of the laser diode, it is observed that the single layer anti reflection (AR) coating at the front facet shows optical damage while the multilayer high reflective coating at the back facet remains undamaged. To determine the “damage threshold” of the materials used for AR coating, an e-beam evaporated Al2O3, MgF2, and SiO2 single layer thin films on GaAs substrate have been optimized for the wavelength ~ 1060 nm. The diode pumped Q-switched Neodymium Yttrium Aluminum Garnet (Nd:YAG) laser (1064 nm) was used to da-mage the samples. The damage on the sample was observed under the microscope. The effective damage radius on the samples was 150 m and average continuous wave laser induced damage threshold was found  10 W. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/31010 popup.nrat_date 2025-03-24 Close