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Information × Registration Number 2113U000576, Article popup.category Стаття Title popup.author popup.publication 01-01-2013 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/31000 popup.publisher Сумський державний університет Description In this paper, the modeling and analysis of single bi-layer Si-QD solar cell is addressed. The modeling of solar cell is done in MATLAB. The photo currents are calculated for various Si-QD diameters like 2.5, 3, 3.5 and 4 nm and SiO2 barrier layer thicknesses like 2.5, 2 and 1.5 nm. It has been observed that with the Si-QD diameter, the photo-current increases. On the other hand, photo-current varies conversely with barrier layer thickness due low carrier tunneling probability through barrier. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/31000 popup.nrat_date 2025-03-24 Close