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Information × Registration Number 2113U001004, Article popup.category Стаття Title popup.author popup.publication 01-01-2013 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/30993 popup.publisher Сумський державний університет Description This work describes the influence of implantation temperature on the layer exfoliation of the H-implanted Ge substrate. For the implantation at RT, post-implantation annealing showed large exfoliated regions over the sample surface. Two depths of the exfoliated regions were observed with average values of about 654 and 856 nm from the top of the H-implanted surface. In the H-implanted Ge at 300 °C, exfoliation occurred in the as-implanted state in the form of surface craters. The average depth of these craters was measured to be about 890 nm from the surface. Simulation results showed that the depth of the exfoliated regions was either located near to the damage peak or away from the H-peak depending upon the implantation temperature. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/30993 popup.nrat_date 2025-03-24 Close