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Information × Registration Number 2113U001678, Article popup.category Thesis Title popup.author popup.publication 01-01-2013 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/33901 popup.publisher Sumy State University Publishing Description Nanocrystallin CdS films with controlled stoichiometry deposited by CSVS were investigated by meth- od of the current-voltage characteristics in ITO/CdS /In structures. It was shown that in the case of cadmi- um excess (S <Cd) charge flow mechanism both in the dark and under illumination is determined by bimo- lecular recombination in the material. In the case of excess sulfur (S>Cd) charge flow mechanism is deter- mined by monomolecular recombination. In the band gap of CdS with excess of cadmium there was detected localized states with energy Et = 0.514 ± 0.026 eV, while in the material with Excess sulfur there are two localized states with energy Et1 = 0.514 ± 0.026 eV and Et2 = 0.700 ± 0.026 eV. Full concentration of localized states is more than 2·1021 m-3 – 5·1022 m-3. Dependence of injection in parameters and nature of injection in the structures based on nanostructured CdS films on their stoichiometry was determined. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/33901 popup.nrat_date 2025-05-12 Close