Search academic texts

Information × Registration Number 2113U001869, Article popup.category Thesis Title popup.author popup.publication 01-01-2013 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/35383 popup.publisher Sumy State University Description In this research, InAs quantum dot structures for mid-infrared emission were self-assembled on InP substrate by using metal-organic chemical vapor deposition. To improve the grown quantum dot’s shape, the dot density and the dot size uniformity, a two-step growth method has been used and investigated. By changing the composition of the InxGa1 – xAs matrix layer of the InAs / InxGa1 – xAs / InP quantum dot structure, emission wavelength of the InAs quantum dot structure has been extended to the longest  2.35 m measured at 77 K. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35383 popup.nrat_date 2025-05-12 Close