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Information × Registration Number 2113U002011, Article popup.category Thesis Title popup.author popup.publication 01-01-2013 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/35332 popup.publisher Sumy State University Description The photoreflectance (PR) spectroscopy was applied to study the band-structure in GaAs:Bi, (Ga,Mn)As and (Ga,Mn)As:Bi layers with the 4% of Mn and 1 % of Bi content and, as a reference, undoped GaAs layer. All films were grown by low temperature (LT) MBE on semi-insulating (001) GaAs substrates. Photoreflec-tance studies were supported by Raman spectroscopy and high resolution X-ray diffractometry (XRD) measurements. Magnetic properties of the films were characterized with a superconducting quantum in-terference device (SQUID) magnetometer. Our findings were interpreted in terms of the model, which as-sumes that the mobile holes residing in the valence band of GaAs and the Fermi level position determined by the concentration of valence-band holes. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35332 popup.nrat_date 2025-05-12 Close