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Information × Registration Number 2113U002118, Article popup.category Thesis Title popup.author popup.publication 01-01-2013 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/35240 popup.publisher Sumy State University Description Nanocrystallin CdS films with controlled stoichiometry deposited by CSVS were investigated by meth-od of the current-voltage characteristics in ITO/CdS /In structures. It was shown that in the case of cadmi-um excess (S <Cd) charge flow mechanism both in the dark and under illumination is determined by bimo-lecular recombination in the material. In the case of excess sulfur (S>Cd) charge flow mechanism is deter-mined by monomolecular recombination. In the band gap of CdS with excess of cadmium there was detect-ed localized states with energy Et = 0.514 ± 0.026 eV, while in the material with Excess sulfur there are two localized states with energy Et1 = 0.514 ± 0.026 eV and Et2 = 0.700 ± 0.026 eV. Full concentration of lo-calized states is more than 2·1021 m-3 – 5·1022 m-3. Dependence of injection in parameters and nature of in-jection in the structures based on nanostructured CdS films on their stoichiometry was determined When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35240 popup.nrat_date 2025-05-12 Close