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Information × Registration Number 2113U002172, Article popup.category Стаття Title popup.author popup.publication 01-01-2013 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/33943 popup.publisher SIGMA-NOT Publishing House Description Transparent and conductive Al doped ZnO thin films were synthesized at room temperature by sol gel technique both pure ZnO and Al-doped(1,3,and 5%) thin films were deposited on a glass substrate. The sols were prepared using zinc acetate dehydrate and aluminum chloride provides Al ions, played an important role in improvement of the c – axis, the structural characteristics have been studied by X-ray diffraction, and UV–Vis-NIR spectroscopy. The films are transparent from the near ultraviolet to the near infrared, SEM image also showed that the average grain size is decreased with increasing of Al concentration, band gap values of prepared thin films varied in the range of (3.18 – 3.42 eV). When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/33943 popup.nrat_date 2025-05-12 Close
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published. 2013-01-01;
Сумський державний університет, 2113U002172
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