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Information × Registration Number 2113U002173, Article popup.category Thesis Title popup.author popup.publication 01-01-2013 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/35210 popup.publisher Sumy State University Description We have investigated the effectiveness of a thin n-In0.2Ga0.8N layer inserted in the bottom n-GaN layer of InGaN/GaN blue light emitting diodes (LEDs) for the protection of multiple quantum wells during the laser lift-off process for vertical LED fabrication. The photoluminescence properties of the InGaN/GaN lateral LEDs are nearly identical irrespective of the existence of the n-In0.2Ga0.8N insertion layer in the bottom n-GaN layer. However, such an insertion is found to effectively increase the photoluminescence intensity of the multiple quantum well and the carrier lifetime of the vertical LEDs. These improvements are attributed to the reduced defect generations in the vertical LEDs during the laser lift-off process due to the presence of the protection layer. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35210 popup.nrat_date 2025-05-12 Close