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Information × Registration Number 2114U001766, Article popup.category Стаття Title popup.author popup.publication 01-01-2014 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/37203 popup.publisher Sumy State University Description We report on thefabrication of a molecular transistor based on a single molecule trapped in a few-layergraphene nanogap. The device is pre-patterned with He-ion beam milling oroxygen plasma etching prior to nanogap formation. Pre-patterning helps tolocalize the gap, and to make it narrower, so that only a few or a singlemolecule can be trapped in it. The nanogap is formed by an electroburning techniqueat room temperature. In order to test the functionality of the device wedeposited diamino-terphenyl molecules in the nanogap. Three-terminal electricalmeasurements showed an increase of the current after deposition, and a gatevoltage dependence at low temperatures. Hence, pre-patterned few-layer graphenejunctions can be used for electron transport measurements through a terphenylmolecule with a future prospective towards more complex molecularconfigurations. popup.nrat_date 2025-05-12 Close