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Information × Registration Number 2114U002426, Article popup.category Thesis Title popup.author popup.publication 01-01-2014 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/34844 popup.publisher Сумський державний університет Description Magnesium oxide seems to be a good candidate regarding its bulk properties: large band gap (7.8 eV), high thermal conductivity and stability and an alternative dielectric to silicon dioxide (SiO2) to reduce the electric field in capacitive networks. MgO, widely used as a substrate for high-temperature superconductor films deposition, has attracted much attention due to its low dielectric constant, low dielectric loss, and less mismatch with YBCO films. With a low dielectric loss, MgO shows a wide application in microwave devices. Due to its low refractive index, MgO is especially a suitable buffer for epitaxial optical waveguide films. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/34844 popup.nrat_date 2025-05-12 Close