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Information × Registration Number 2115U001868, Article popup.category Стаття Title popup.author popup.publication 01-01-2015 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/43178 popup.publisher Proceedings of International Symposium on Semiconductor Materials and Devices Description Undoped and Al doped ZnO films are obtained by chemical bath deposition onto glass substrates. Investigations of the effect of reaction time on structural and sub-structural features were carried out using high resolution scanning electron microscopy (SEM) and X-ray diffraction analysis. The effects of deposition time on elemental composition are found. Deposited ZnO and ZnO:Al films have a hexagonal structure with growth texture of [002]. Lattice constants of undoped material weakly depend on the time of synthesis and vary in the range of a = 0.32486-0.32548 nm, c = 0.52064-0.52149 nm. Simultaneously, lattice constants of Al doped ZnO films vary in the wide range: a = 0.32490-0.31997 nm, c = 0.52293-0.52116 nm. The coherent scattering domain size (CSD) of undoped ZnO are in the range of (L(100) = (24.5 - 27.3) nm, L(002) = (26.4 - 28.8) nm, L(101) = (25.0 - 27.1) nm). In the ZnO:Al films the CSD size increased with increasing the duration of their synthesis from 45 to 90 min (L(100) = (19.5 - 52.3) nm, L(002) = (23.2 - 55.0) nm, L(101) = (17.6 - 48.3) nm). Further increase of reaction time up to 120 min led to a significant reduction of the CSD size in all crystallographic directions (L(100) = 38.0 nm, L(002) = 39.0 nm, L(101) = 39.4 nm) which was due to the peculiarities of ZnO:Al growth. popup.nrat_date 2025-05-12 Close