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Information × Registration Number 2115U001943, Article popup.category Стаття Title popup.author popup.publication 01-01-2015 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/42930 popup.publisher Sumy State University Description The thin-film SiGe is considered as promising candidate to meet the outstanding need for photovoltaic applications with enhanced adsorption characteristics and improved conversion efficiency [1-6]. In this paper, we simulated a solar cell type SiGe using AMPS1D (Analysis of Microelectronic and photonic structure) developed at Pennsylvania State University, to analyze emitter layer (thickness, doping) and we studied their influence on the photovoltaic solar cell. The simulation result shows that the maximum efficiency of 16.181 % has been achieved, with short circuit current density of 32.657 mA/cm2, open circuit voltage of 0.61 V and fill factor of 0.809. The obtained results show that the proposed design can be considered as a potential candidate for high performance photovoltaic applications. popup.nrat_date 2025-05-12 Close