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Information × Registration Number 2116U001024, Article popup.category Стаття Title popup.author popup.publication 01-01-2016 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/47290 popup.publisher Sumy State University Description We investigated the structural and optical properties of zinc oxide (ZnO) thin film as the n-type semiconductor. In this work, the sol–gel method used to fabricate ZnO thin film on glass substrate at different solution molarities of 0.1, 0.3 and 0.5 mol/l of zinc acetate dehydrate. The DRX analyses indicated that the coated ZnO films exhibit an hexagonal structure wurtzite and (002) oriented with the maximum value of crystallite size G  69.32 nm is measured wi 0.5 mol/l. The thin film exhibit an average optical transparency is over 80 % at high molarity, in the visible region, found that the optical band gap energy was increased up to 3.25 eV at 0.5 mol/l. The minimum value of Urbach energy of ZnO thin film was achieved with 0.5 mol/l. popup.nrat_date 2025-03-24 Close
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Стаття
: published. 2016-01-01; Сумський державний університет, 2116U001024
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Updated: 2026-03-22