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Information × Registration Number 2116U001163, Article popup.category Стаття Title popup.author popup.publication 01-01-2016 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/49902 popup.publisher Sumy State University Description This paper presents a new low power and high speed full adder based on Carbon Nano Tube Field Effect Transistor (CNTFET) technology. This proposed full adder is based on a XOR logic function using 32 nm CNTFET technology. The MOSFET-like CNTFET is applied in this paper to use CMOS (Complementary Metal Oxide Semiconductor) logic gate. The better structure of CNTFET transistors can improve the performance of full adder based on CNTFET technology [1]. The proposed full adder is simulated in different frequencies, various supply voltages, temperatures and load capacitances to prove better performance in different conditions using the Synopsys HSPICE simulator software in comparison with previous full adders in CNTFET technology. popup.nrat_date 2025-03-24 Close
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Стаття
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published. 2016-01-01;
Сумський державний університет, 2116U001163
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